Amorphous silicon based betavoltaic devices
نویسندگان
چکیده
Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 W/cm 2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium rather than a creation of defects by beta particles.
منابع مشابه
Tritiated amorphous silicon betavoltaic devices - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and
The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...
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